FullChip®
- OPC
- Manhattan
- Rules-based
- Model-based
- Curvi-linear (FrogToe)
- Manhattan
- Design Verification
- Edge-placement error (EPE)
- Process-Variation Bands (PV-Bands)
- Hot-spot detection'
- bridging and necking detection
- via overlap analysis
- SRAF Placement
- Rules-based
- Model-bsed
- DRC/MRC
- Mask Re-targeting
- EUV/DUV
- M3D
- Mask "3D Effects" model for more accuracy
- Constant Scattering Coefficients (CSC)
- Non-constant Scattering Coefficients (NCSC)
- Pattern Matching Technology
- Layout Server/Client Viewer Architecture
- multiple users simultaneously accessing/processing same layout
- centralized layout storage
- Fast litho models for large-area/full-chip processing
- Distributed Computing with SimRunner