Improved GDS Export in HyperLith

This new features allows the user to export a sequence of programmed patterns to a gds file.  This is great for creating test masks.  Click READ MORE for the demo video...


Panoramic Technology Inc. implements RCWA!

  • Very accurate
  • Very fast for small, 2D domains
  • 3D domains (2D gratings) supported
  • Excellent for EUV lines/spaces with varying film thicknesses and angles of incidence
  • Integrated into EM-Suite and HyperLith
  • 32/64 bit support for Windows and Linux
  • Free for existing customers with the TEMPESTpr2 option
  • Demo Video

Click here for presentation.



(click here for presentation)

Technical Papers

By our customers

  • Z. Mark Ma, Steve McDonald, Chris Progler, "Revisiting adoption of High Transmission PSM: pros, cons and path forward", Proc. SPIE Vol. 7520-41, 2009
  • Hoyoung Kang et al., “EUV simulation extension study for mask shadowing effect and its correction”, Proc. SPIE Vol. 6921-130, 2008.
  • Kostas Adam, Michael Lam, “Hybrid Hopkins-Abbe method for modeling oblique angle mask effects in OPC”, Proc. SPIE Vol. 6924-49, 2008.
  • Norihiro Yamamoto, Jongwook Kye, Harry J. Levinson, "Mask Topography Effect with Polarization at Hyper NA", Proc. SPIE Vol. 6154-171, 2006.
  • Yosuke Kojima, Takashi Ohshima, Kazuaki Chiba, Toshio Konishi, "Performance Study of Chromeless Phase Lithography Mask for the 65nm Node and Beyond", Proc. SPIE Vol. 6154-81, 2006.
  • Takahiro Matsumoto, Hideki Ina, Koichi Sentoku, "Alignment Offset Analyser agains Wafer Induced Shift (WIS)", Proc. SPIE Vol. 5375, 2004.
  • Shoji Hotta, Katsuya Hayao, Kazuyuki Kakuta, Norio Hasegawa, "New Double Exposure Technique using Alternating Phase-Shifting Mask with Reversed Phase", Proc. SPIE Vol. 5377, 2004
  • Joel L. Seligson, Boris Golovanevsky, Jorge M. Poplawski, Michael E. Adel, Richard M. Silver, "Overlay metrology simulations: analytical and experimental validations", Proc. SPIE Vol. 5038, p. 61-69, Metrology, Inspection, and Process Control for Microlithography XVII; Daniel J. Herr; Ed., May 2003
  • Toshio Konishi et al., "Study of alternating phase shift mask structure for 65nm node devices", Proceedings of SPIE Vol. 5256, 2003.
  • Armen Kroyan, Hua-Yu Liu, "Effects of Alternating Aperture PSM Design on Image Imbalance for 65nm Technology", Proc. SPIE Vol. 4889, p. 1217-1226, 22nd Annual BACUS Symposium on Photomask Technology; Brian J. Grenon, Kurt R. Kimmel; Eds., Dec 2002
  • Amr Y. Abdo, Pei-yang Yan, "Numerical investigation of EUV mask contact layer defect printability at the 30-nm technology node", Proc. SPIE Vol. 4688, p. 725-732, Emerging Lithographic Technologies VI; Roxann L. Engelstad; Ed., Jul 2002
  • Paul Harris, Martin McCallum, "Effect of Aberrations on Defect Printing and Inspection", Proceedings of SPIE Vol. 4691, Part two, Page1480, 2002.
  • Kei Mesuda, Nobuhito Toyama, Shogo Narukawa, Yutaka Morikawa, Hiroshi Mohri, Naoya Hayashi and Morihisa Hoga, "Optimization of Alt-PSM stucture for 100nm-node ArF Lithography", Proceedings of SPIE Vol.4754, p.396, 2002.
  • Ken Ozawa, et al., "Defect Printability of Alternating Phase-Shift Mask: A critical Comparison of Simulation and Experiment", 2002 SPIE (Optical lithography vol.4621,p1009-1020)
  • Ken Ozawa et al., "Defect Printability of ArF Alternating Phase-Shift Mask: A critical Comparison of Simulation and Experiment", 2002 PMJ (SPIE vol. 4754, p630-639)
  • Stephen Hsu et al., "Reticle Defect Printability for Sub-0.3k1 Chromeless Phase Lithography (CPL) Technology", Proceedings SPIE Vol. 4754, 2002.
  • Erdmann, A., Gordon R., McCallum, M., Rosenbusch, A., "3D electromagnetic field simulation for low-k1 lithography", Microlithography World magazine, Volume 10, Number 1, February 2001.